Electronic properties of a biased graphene bilayer. Eduardo V Castro, K S Novoselov, S V Morozov, N M R Peres, J M B Lopes dos Santos, Johan Nilsson, F Guinea, A K Geim and A H Castro Neto. 2010 J. Phys.: Condens. Matter. 22 175503
Ferromagnetic domain wall on nanometer scale. D A Christian, K S Novoselov, S V Dubonos, S V Morozov, E W Hill, I V Grigorieva and A K Geim. 2005 J. Phys.: Conf. Ser. 17 101
Barkhausen effect in a garnet film studied by ballistic hall micromagnetometry. D A Christian, K S Novoselov and A K Geim. 2005 J. Phys.: Conf. Ser. 15 125
The edge and bulk electron state dominated magnetotransport in multi-terminal single-crystalline refractory metal nanostructuresG M Mikhailov, A V Chernykh, J C Maan, J G S Lok, A K Geim, D Esteve and P Joyez. 2000 Nanotechnology 11 379
The Hall effect of an inhomogeneous magnetic field in mesoscopic structures. Xin-Qi Li, F M Peeters and A K Geim2000 J. Phys.: Condens. Matter 9 8065
Of flying frogs and levitrons. M V Berry and A K Geim. 2000 Eur. J. Phys. 18 307
Resonant tunnelling quantum dots and wires: some recent problems and progress. P H Beton, H Buhmann, L Eaves, T J Foster, A K Geim, N LaScala Jr, P C Main, L Mansouri, N Mori, J W Sakai and J Wang. 1994 Semicond. Sci. Technol. 9 1912
Universal conductance fluctuations in a multi-subband quantum well. H A Carmona, A K Geim, C J G M Langerak, T J Foster, C V Brown, P C Main and S P Beaumont. 1994 J. Phys.: Condens. Matter 6 5129
Unambiguous identification of X-point-related resonances in GaAs/AlAs/GaAs tunnel diodes under hydrostatic pressure. Z Othaman, A K Geim, S J Bending, R T Syme and R S Smith. 1994 Semicond. Sci. Technol. 8 1483
Electron transport in graphene. S V Morozov, K S Novoselov and A K Geim. 2008 Phys.-Usp. 51 1483
Источник: http://iopscience.iop.org/page/Nobel